Gate density has been increasing with each node and that has been pushing up power per unit area. This has become an even bigger issue with FinFET processes where the channels are more thermally isolated than planar processes before them.


In the last few planar nodes leakage was an issue which led to significant power consumption even in idle states, that’s been pegged back somewhat with the latest FinFET nodes but it’s going to continue to be an issue going forward as we look toward 7nm and beyond.

In addition, if you are developing for consumer products, smartphones, tablets etc then you are always limited in terms of how much heat you can dissipate because you don’t have things like active cooling systems, fans etc and obviously the upper limit of the product is limited as well, you know you can’t go up to such higher temperatures and the hotter things get the bigger the issue of reliability and lifetime of device parts which is perhaps the biggest thing going forward.

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